Infineon SMBT3904PNH6327XTSA1 Dual NPN + PNP Transistor, 200 mA, 40 V, 6-Pin SOT-363
Product Information
Dimensions:
2 x 1.25 x 0.8mm
Maximum Collector Emitter Saturation Voltage:
0.4 V
Width:
1.25mm
Transistor Configuration:
Isolated
Maximum Operating Frequency:
250 (Min.) MHz
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN + PNP
Maximum Collector Base Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
0.95 V
Maximum Emitter Base Voltage:
6 V
Length:
2mm
Maximum DC Collector Current:
200 mA
Pin Count:
6
Minimum DC Current Gain:
30
Mounting Type:
Surface Mount
Maximum Power Dissipation:
250 mW
Maximum Collector Emitter Voltage:
40 V
Height:
0.8mm
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This is Dual NPN + PNP Transistor 200 mA 40 V 6-Pin SOT-363 manufactured by Infineon. The manufacturer part number is SMBT3904PNH6327XTSA1. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product has a maximum 0.4 v collector emitter saturation voltage . Furthermore, the product is 1.25mm wide. The product offers isolated transistor configuration. It carries 250 (min.) mhz of maximum operating frequency. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn + pnp type. Additionally, it has 40 v maximum collector base voltage. In addition, the product has a maximum 0.95 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 2mm. Moreover, it has a maximum DC collector current of 200 ma. It contains 6 pins. It features up to 30 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 250 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). In addition, the height is 0.8mm.
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