Infineon IRLS4030-7PPBF N-channel MOSFET, 190 A, 100 V HEXFET, 7-Pin D2PAK
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
93 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
370 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Channel Type:
N
Minimum Gate Threshold Voltage:
1V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
4 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
190 A
Transistor Material:
Si
Height:
4.55mm
Maximum Operating Temperature:
+175 °C
Pin Count:
7
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRLS4030-7PPBF N-channel MOSFET, 190 A, 100 V HEXFET, 7-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLS4030-7PPBF N-channel MOSFET, 190 A, 100 V HEXFET, 7-Pin D2PAK.
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Yes. We ship IRLS4030-7PPBF Internationally to many countries around the world.
This is N-channel MOSFET 190 A 100 V HEXFET 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRLS4030-7PPBF. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 93 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 370 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 1v. The product carries 2.5v of maximum gate threshold voltage. It provides up to 4 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 190 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.55mm. It has a maximum operating temperature of +175 °c. It contains 7 pins. The product offers single transistor configuration.
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