Infineon IRF8010SPBF N-channel MOSFET, 80 A, 100 V HEXFET, 3-Pin D2PAK
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
81 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3830 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
61 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
260 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
15 mΩ
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Yes. We ship IRF8010SPBF Internationally to many countries around the world.
This is N-channel MOSFET 80 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF8010SPBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 81 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3830 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 61 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 260 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 15 mω maximum drain source resistance.
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