Infineon IPP60R520E6XKSA1 N-channel MOSFET, 8.1 A, 600 V CoolMOS E6, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
8.1 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
23.4 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
66 W
Series:
CoolMOS E6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
520 mΩ
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This is N-channel MOSFET 8.1 A 600 V CoolMOS E6 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP60R520E6XKSA1. While 8.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 66 w maximum power dissipation. The product coolmos e6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 520 mω maximum drain source resistance.
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