Infineon IPI60R280C6XKSA1 N-channel MOSFET, 13.8 A, 650 V CoolMOS C6, 3-Pin I2PAK
Product Information
Category:
Power MOSFET
Dimensions:
10.36 x 4.57 x 11.17mm
Maximum Continuous Drain Current:
13.8 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Drain Source Resistance:
280 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
950 pF @ 100 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
11.17mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
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This is N-channel MOSFET 13.8 A 650 V CoolMOS C6 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IPI60R280C6XKSA1. It is of power mosfet category . The given dimensions of the product include 10.36 x 4.57 x 11.17mm. While 13.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. It provides up to 280 mω maximum drain source resistance. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 43 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 950 pf @ 100 v . Its accurate length is 10.36mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 100 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. The product coolmos c6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 11.17mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v .
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