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Infineon IPD50P04P413ATMA1 P-channel MOSFET, 50 A, 40 V OptiMOS P, 3-Pin DPAK

IPD50P04P413ATMA1 Infineon  P-channel MOSFET, 50 A, 40 V OptiMOS P, 3-Pin DPAK
IPD50P04P413ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Channel Type:
P
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
58 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12.6 mΩ
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This is P-channel MOSFET 50 A 40 V OptiMOS P 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50P04P413ATMA1. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 58 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12.6 mω maximum drain source resistance.

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IPD50P04P4-13, OptiMOS-P2 Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPD50P04P413ATMA1 P-channel MOSFET, 50 A, 40 V OptiMOS P, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD50P04P413ATMA1 P-channel MOSFET, 50 A, 40 V OptiMOS P, 3-Pin DPAK.
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Yes. We ship IPD50P04P413ATMA1 Internationally to many countries around the world.