Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263)
Product Information
Mounting Type:
Through Hole
Maximum Power Dissipation:
187 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Maximum Continuous Collector Current:
60 A
Maximum Gate Emitter Voltage:
+/-20V
Package Type:
PG-TO263-3
Pin Count:
3
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Yes. We ship IGB30N60H3ATMA1 Internationally to many countries around the world.
This is IGBT 30 A 600 V 3+Tab-Pin D2PAK (TO-263) manufactured by Infineon. The manufacturer part number is IGB30N60H3ATMA1. The product is available in through hole configuration. Provides up to 187 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). It has 1 transistors . The product has a maximum 60 a continuous collector current . It offers a maximum +/-20v gate emitter voltage . The package is a sort of pg-to263-3. It contains 3 pins.
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