Infineon BSZ100N03MSGATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS 3 M, 8-Pin TSDSON
Product Information
Maximum Continuous Drain Current:
40 A
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TSDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
30 W
Series:
OptiMOS 3 M
Maximum Gate Source Voltage:
+20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
11.4 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSZ100N03MSGATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS 3 M, 8-Pin TSDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSZ100N03MSGATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS 3 M, 8-Pin TSDSON.
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Yes. We ship BSZ100N03MSGATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 40 A 30 V OptiMOS 3 M 8-Pin TSDSON manufactured by Infineon. The manufacturer part number is BSZ100N03MSGATMA1. While 40 a of maximum continuous drain current. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of tsdson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 30 w maximum power dissipation. The product optimos 3 m, is a highly preferred choice for users. It features a maximum gate source voltage of +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 11.4 mω maximum drain source resistance.
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