Infineon BSZ065N03LSATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TDSON
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
5.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
26 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Width:
3.4mm
Length:
3.4mm
Maximum Drain Source Resistance:
8.6 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Forward Diode Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSZ065N03LSATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon BSZ065N03LSATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16792602 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16792602.
Yes. We ship BSZ065N03LSATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 40 A 30 V OptiMOS 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSZ065N03LSATMA1. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 5.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 26 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 3.4mm wide. Its accurate length is 3.4mm. It provides up to 8.6 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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