Renesas 2SJ529STR-E P-channel MOSFET, 10 A, 60 V, 3-Pin DPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.5 x 5.5 x 2.3mm
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
5.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
DPAK-S (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
P
Typical Input Capacitance @ Vds:
580 pF @ -10 V
Length:
6.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
85 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
20 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.3mm
Typical Turn-On Delay Time:
10 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
240 mΩ
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This is Renesas P-channel MOSFET 10 A 60 V 3-Pin DPAK manufactured by Renesas Electronics. The manufacturer part number is 2SJ529STR-E. It is of power mosfet category . The given dimensions of the product include 6.5 x 5.5 x 2.3mm. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.5mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of dpak-s (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 580 pf @ -10 v . Its accurate length is 6.5mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 85 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 20 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.3mm. In addition, it has a typical 10 ns turn-on delay time . Its forward diode voltage is 1.2v . It provides up to 240 mω maximum drain source resistance.
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