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ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC

FDS9958-F085 ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC
FDS9958-F085
FDS9958-F085
ET16727201
ET16727201
Unclassified
Unclassified
ON Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
765 pF @ -30 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.575mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is FDS9958_F085 Dual P-channel MOSFET 2.9 A 60 V PowerTrench 8-Pin SOIC manufactured by ON Semiconductor. The manufacturer part number is FDS9958-F085. It is of power mosfet category . The given dimensions of the product include 4.9 x 3.9 x 1.575mm. While 2.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.9mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 765 pf @ -30 v . Its accurate length is 4.9mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 27 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.575mm. In addition, it has a typical 6 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.

pdf icon
FDS9958_F085, Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mOhm(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

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We accept all major payment methods for all products including ET16727201. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FDS9958-F085 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDS9958_F085 Dual P-channel MOSFET, 2.9 A, 60 V PowerTrench, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16727201 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16727201.
Yes. We ship FDS9958-F085 Internationally to many countries around the world.