Vishay SUP70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB
Product Information
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
76 nC @ 10 V
Channel Type:
N
Length:
10.51mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
375 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.49mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
4.6 mΩ
Checking for live stock
FAQs
Yes. You can also search SUP70040E-GE3 on website for other similar products.
We accept all major payment methods for all products including ET16723862. Please check your shopping cart at the time of order.
You can order Vishay brand products with SUP70040E-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SUP70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Vishay SUP70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16723862 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16723862.
Yes. We ship SUP70040E-GE3 Internationally to many countries around the world.
This is N-channel MOSFET 120 A 100 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SUP70040E-GE3. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 76 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 375 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.49mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 4.6 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.