ON Semiconductor SCH1330-TL-W
Product Information
Category:
Power MOSFET
Dimensions:
1.6 x 1.5 x 0.56mm
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
SOT-563
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
120 pF @ -10 V
Length:
1.6mm
Pin Count:
6
Forward Transconductance:
1.9S
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.56mm
Typical Turn-On Delay Time:
5.3 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
615 mΩ
Base Part Number:
SCH133
Detailed Description:
P-Channel 20V 1.5A (Ta) 1W (Ta) Surface Mount SOT-563/SCH6
Input Capacitance (Ciss) (Max) @ Vds:
120pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
241mOhm @ 750mA, 4.5V
Supplier Device Package:
SOT-563/SCH6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is SCH1330-TL-W. It is of power mosfet category . The given dimensions of the product include 1.6 x 1.5 x 0.56mm. While 1.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.5mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.4v of maximum gate threshold voltage. The package is a sort of sot-563. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.7 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 120 pf @ -10 v . Its accurate length is 1.6mm. It contains 6 pins. The forward transconductance is 1.9s . Whereas, its typical turn-off delay time is about 16 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. In addition, the height is 0.56mm. In addition, it has a typical 5.3 ns turn-on delay time . Its forward diode voltage is 1.2v . It provides up to 615 mω maximum drain source resistance. Base Part Number: sch133. It features p-channel 20v 1.5a (ta) 1w (ta) surface mount sot-563/sch6. The product's input capacitance at maximum includes 120pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The typical Vgs (th) (max) of the product is 1.4v @ 1ma. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 1.7nc @ 4.5v. It has a maximum Rds On and voltage of 241mohm @ 750ma, 4.5v. sot-563/sch6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-563, sot-666. The product carries maximum power dissipation 1w (ta). The continuous current drain at 25°C is 1.5a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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