Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 1.1mm
Maximum Continuous Drain Current:
171 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SO-8FL
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
83.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5660 pF @ 15 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
96.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
26 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
3 mΩ
Base Part Number:
NTMFS4
Detailed Description:
N-Channel 30V 17A (Ta), 171A (Tc) 950mW (Ta), 96.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
5660pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
40.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
2mOhm @ 22A, 10V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN, 5 Leads
Power Dissipation (Max):
950mW (Ta), 96.2W (Tc)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 171A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS4825NFET1G. It is of power mosfet category . The given dimensions of the product include 5.1 x 6.1 x 1.1mm. While 171 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of so-8fl. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 83.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5660 pf @ 15 v . Its accurate length is 5.1mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 36 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 96.2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. In addition, it has a typical 26 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -40 °c. It provides up to 3 mω maximum drain source resistance. Base Part Number: ntmfs4. It features n-channel 30v 17a (ta), 171a (tc) 950mw (ta), 96.2w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 5660pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 40.2nc @ 4.5v. It has a maximum Rds On and voltage of 2mohm @ 22a, 10v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn, 5 leads. The product carries maximum power dissipation 950mw (ta), 96.2w (tc). The continuous current drain at 25°C is 17a (ta), 171a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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