ON Semiconductor MVDF2C03HDR2G
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
MVDF2
Detailed Description:
Mosfet Array N and P-Channel Complementary 30V 4.1A, 3A 2W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
630pF @ 24V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
70mOhm @ 3A, 10V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel Complementary
Customer Reference:
Power - Max:
2W
Current - Continuous Drain (Id) @ 25°C:
4.1A, 3A
Manufacturer:
ON Semiconductor
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Yes. We ship MVDF2C03HDR2G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MVDF2C03HDR2G. The FET features of the product include logic level gate. Base Part Number: mvdf2. It features mosfet array n and p-channel complementary 30v 4.1a, 3a 2w surface mount 8-soic. The product's input capacitance at maximum includes 630pf @ 24v. The maximum gate charge and given voltages include 16nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 70mohm @ 3a, 10v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel complementary. The maximum power of the product is 2w. The continuous current drain at 25°C is 4.1a, 3a. The on semiconductor's product offers user-desired applications.
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