ON Semiconductor KSD5041QTA
Product Information
Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
750 mW
Maximum Continuous Collector Current:
5 A
Maximum Collector Emitter Voltage:
20 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Emitter Base Voltage:
7 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSD5041
Detailed Description:
Bipolar (BJT) Transistor NPN 20V 5A 150MHz 750mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
230 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 3A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
750mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship KSD5041QTA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSD5041QTA. It features up to 150 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 750 mw maximum power dissipation. The product has a maximum 5 a continuous collector current . Whereas features a 20 v of collector emitter voltage (max). In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. The package is a sort of to-92. It consists of 1 elements per chip. The product has a maximum 1 v collector emitter saturation voltage . It features a 7 v of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksd5041. It features bipolar (bjt) transistor npn 20v 5a 150mhz 750mw through hole to-92-3. Furthermore, 230 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 150mhz. The 1v @ 100ma, 3a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 750mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 5a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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