ON Semiconductor FW276-TL-2H
Product Information
Maximum Drain Source Voltage:
450 V
Typical Gate Charge @ Vgs:
3.7 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
1.375mm
Width:
3.9mm
Length:
4.9mm
Maximum Drain Source Resistance:
12.1 Ω
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
FW276
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 450V 700mA 1.6W Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
55pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Drain to Source Voltage (Vdss):
450V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
12.1Ohm @ 350mA, 10V
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.6W
Current - Continuous Drain (Id) @ 25°C:
700mA
Manufacturer:
ON Semiconductor
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FAQs
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14524041 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14524041.
Yes. We ship FW276-TL-2H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FW276-TL-2H. It has a maximum of 450 v drain source voltage. With a typical gate charge at Vgs includes 3.7 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 1.375mm. Furthermore, the product is 3.9mm wide. Its accurate length is 4.9mm. It provides up to 12.1 ω maximum drain source resistance. The package is a sort of soic. It consists of 2 elements per chip. While 700 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. Base Part Number: fw276. It features mosfet array 2 n-channel (dual) 450v 700ma 1.6w surface mount 8-soic. The product's input capacitance at maximum includes 55pf @ 20v. The maximum gate charge and given voltages include 3.7nc @ 10v. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. The product has a 450v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 12.1ohm @ 350ma, 10v. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.6w. The continuous current drain at 25°C is 700ma. The on semiconductor's product offers user-desired applications.
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