Dimensions:
3 x 1.68 x 1.12mm
Maximum Collector Emitter Saturation Voltage:
0.15 V
Width:
1.68mm
Transistor Configuration:
Isolated
Maximum Operating Frequency:
300 MHz
Package Type:
SOT-23
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
180 V
Maximum Base Emitter Saturation Voltage:
1 V
Maximum Emitter Base Voltage:
6 V
Length:
3mm
Maximum DC Collector Current:
100 mA
Pin Count:
6
Minimum DC Current Gain:
80
Mounting Type:
Surface Mount
Maximum Power Dissipation:
700 mW
Maximum Collector Emitter Voltage:
160 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
49 Weeks
Base Part Number:
FMB55
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 600mA 300MHz 700mW Surface Mount SuperSOT™-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Supplier Device Package:
SuperSOT™-6
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
700mW
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is FMB5551. The given dimensions of the product include 3 x 1.68 x 1.12mm. The product has a maximum 0.15 v collector emitter saturation voltage . Furthermore, the product is 1.68mm wide. The product offers isolated transistor configuration. It carries 300 mhz of maximum operating frequency. The package is a sort of sot-23. It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 180 v maximum collector base voltage. In addition, the product has a maximum 1 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 3mm. Moreover, it has a maximum DC collector current of 100 ma. It contains 6 pins. It features up to 80 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 700 mw maximum power dissipation. Whereas features a 160 v of collector emitter voltage (max). In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 49 weeks of manufacturer standard lead time. Base Part Number: fmb55. It features bipolar (bjt) transistor array 2 npn (dual) 160v 600ma 300mhz 700mw surface mount supersot™-6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 300mhz. The 200mv @ 5ma, 50ma is the maximum Vce saturation. supersot™-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 700mw. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The maximum collector current includes 600ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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