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ON Semiconductor FDMC86324

FDMC86324 ON Semiconductor
FDMC86324
FDMC86324
ON Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
3.3 x 3.3 x 1.05mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
725 pF@ 50 V
Length:
3.3mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
40 mΩ
Manufacturer Standard Lead Time:
35 Weeks
Detailed Description:
N-Channel 80V 7A (Ta), 20A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMC86
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
965pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power33
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 20A (Tc)
Customer Reference:
Power Dissipation (Max):
2.3W (Ta), 41W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMC86324. It is of power mosfet category . The given dimensions of the product include 3.3 x 3.3 x 1.05mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The package is a sort of power 33. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 725 pf@ 50 v . Its accurate length is 3.3mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 14 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 41 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. In addition, it has a typical 8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 40 mω maximum drain source resistance. It has typical 35 weeks of manufacturer standard lead time. It features n-channel 80v 7a (ta), 20a (tc) 2.3w (ta), 41w (tc) surface mount power33. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdmc86. The maximum gate charge and given voltages include 18nc @ 10v. It has a maximum Rds On and voltage of 23mohm @ 7a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 965pf @ 50v. The product powertrench®, is a highly preferred choice for users. power33 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7a (ta), 20a (tc). The product carries maximum power dissipation 2.3w (ta), 41w (tc). This product use mosfet (metal oxide) technology.

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MOSET Power Trench N Channel 80V 20A(Technical Reference)
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FDMC86324(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

Yes. You can also search FDMC86324 on website for other similar products.
We accept all major payment methods for all products including ET14519159. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FDMC86324 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDMC86324. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDMC86324.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519159 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519159.
Yes. We ship FDMC86324 Internationally to many countries around the world.