Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 10 V
Channel Type:
N
Length:
2.92mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.5 Ω
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 50V 220mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
BSS138
Gate Charge (Qg) (Max) @ Vgs:
2.4nC @ 10V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 220mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
27pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Customer Reference:
Power Dissipation (Max):
360mW (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is BSS138. While 220 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 50 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.92mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 360 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.93mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.5 ω maximum drain source resistance. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 50v 220ma (ta) 360mw (ta) surface mount sot-23-3. The typical Vgs (th) (max) of the product is 1.5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: bss138. The maximum gate charge and given voltages include 2.4nc @ 10v. It has a maximum Rds On and voltage of 3.5ohm @ 220ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 50v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 27pf @ 25v. sot-23-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 220ma (ta). The product carries maximum power dissipation 360mw (ta). This product use mosfet (metal oxide) technology.
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