This is manufactured by ON Semiconductor. The manufacturer part number is 2N5884. Base Part Number: 2n5884. It features bipolar (bjt) transistor pnp 80v 25a 4mhz 200w through hole to-204 (to-3). Furthermore, 20 @ 10a, 4v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 4v @ 6.25a, 25a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 25a. In addition, 2ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
2N5883-5886(Datasheets)
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N5884. Base Part Number: 2n5884. It features bipolar (bjt) transistor pnp 80v 25a 4mhz 200w through hole to-204 (to-3). Furthermore, 20 @ 10a, 4v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 4v @ 6.25a, 25a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 25a. In addition, 2ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.