Infineon IRFS7530PBF N-channel MOSFET, 295 A, 60 V HEXFET, 3-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
295 A
Transistor Material:
Si
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
274 nC @ 10 V
Channel Type:
N
Length:
10.54mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.65mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.1 mΩ
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Yes. We ship IRFS7530PBF Internationally to many countries around the world.
This is N-channel MOSFET 295 A 60 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS7530PBF. While 295 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.69mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 274 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.54mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.65mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.1 mω maximum drain source resistance.
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