Infineon IRF7311PBF Dual N-channel MOSFET, 6.6 A, 20 V HEXFET, 8-Pin SOIC
Product Information
Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.7V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
29 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7311PBF Dual N-channel MOSFET, 6.6 A, 20 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7311PBF Dual N-channel MOSFET, 6.6 A, 20 V HEXFET, 8-Pin SOIC.
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Yes. We ship IRF7311PBF Internationally to many countries around the world.
This is Dual N-channel MOSFET 6.6 A 20 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7311PBF. While 6.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.7v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 29 mω maximum drain source resistance.
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