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Infineon IRF1405ZS-7PPBF N-channel MOSFET, 150 A, 55 V HEXFET, 7-Pin D2PAK

IRF1405ZS-7PPBF Infineon  N-channel MOSFET, 150 A, 55 V HEXFET, 7-Pin D2PAK
Infineon

Product Information

Category:
Power MOSFET
Maximum Continuous Drain Current:
150 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
150 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5360 pF@ 25 V
Pin Count:
7
Typical Turn-Off Delay Time:
170 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
230 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.55mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 150 A 55 V HEXFET 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF1405ZS-7PPBF. It is of power mosfet category . While 150 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 150 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5360 pf@ 25 v . It contains 7 pins. Whereas, its typical turn-off delay time is about 170 ns . The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 230 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.55mm. In addition, it has a typical 16 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 5 mω maximum drain source resistance.

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IRF1405ZS-7PPbF, IRF1405ZL-7PPbF, 55V N-Channel HEXFET Power MOSFET(Technical Reference)

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FAQs

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We accept all major payment methods for all products including ET14141826. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRF1405ZS-7PPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF1405ZS-7PPBF N-channel MOSFET, 150 A, 55 V HEXFET, 7-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF1405ZS-7PPBF N-channel MOSFET, 150 A, 55 V HEXFET, 7-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14141826 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14141826.
Yes. We ship IRF1405ZS-7PPBF Internationally to many countries around the world.