Infineon IPB80N06S2L-H5 N-channel MOSFET, 80 A, 55 V OptiMOS, 3-Pin TO-263
Product Information
Category:
Power MOSFET
Dimensions:
10 x 9.25 x 4.4mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
145 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5000 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
75 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
4.4mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6.5 mΩ
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This is N-channel MOSFET 80 A 55 V OptiMOS 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB80N06S2L-H5. It is of power mosfet category . The given dimensions of the product include 10 x 9.25 x 4.4mm. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.25mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 145 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5000 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 75 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.4mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 6.5 mω maximum drain source resistance.
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