Infineon IRF530NSPBF N-channel MOSFET, 17 A, 100 V HEXFET, 3-Pin D2PAK
Product Information
Category:
Power MOSFET
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
920 pF@ 25 V
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
9.2 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
90 mΩ
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Yes. We ship IRF530NSPBF Internationally to many countries around the world.
This is N-channel MOSFET 17 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRF530NSPBF. It is of power mosfet category . While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 920 pf@ 25 v . It contains 3 pins. Whereas, its typical turn-off delay time is about 35 ns . The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.8 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 9.2 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 90 mω maximum drain source resistance.
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