Infineon IPP040N06N3 G N-channel MOSFET, 90 A, 60 V OptiMOS 3, 3-Pin TO-220
Product Information
Category:
Power MOSFET
Dimensions:
10.36 x 4.57 x 15.95mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
98 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8000 pF @ 30 V
Length:
10.36mm
Pin Count:
3
Forward Transconductance:
121S
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
188 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
15.95mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4 mΩ
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This is N-channel MOSFET 90 A 60 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP040N06N3 G. It is of power mosfet category . The given dimensions of the product include 10.36 x 4.57 x 15.95mm. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 98 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 8000 pf @ 30 v . Its accurate length is 10.36mm. It contains 3 pins. The forward transconductance is 121s . Whereas, its typical turn-off delay time is about 40 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 188 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 15.95mm. In addition, it has a typical 30 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 4 mω maximum drain source resistance.
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