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Infineon IPD30N03S2L-20 N-channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin TO-252

IPD30N03S2L-20 Infineon  N-channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin TO-252
IPD30N03S2L-20
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
530 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
2.41mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
20 mΩ
Checking for live stock

This is N-channel MOSFET 30 A 30 V OptiMOS 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD30N03S2L-20. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 530 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 19 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.41mm. In addition, it has a typical 5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 20 mω maximum drain source resistance.

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OptiMOS® Power-Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPD30N03S2L-20 N-channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD30N03S2L-20 N-channel MOSFET, 30 A, 30 V OptiMOS, 3-Pin TO-252.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14089401 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14089401.
Yes. We ship IPD30N03S2L-20 Internationally to many countries around the world.