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Infineon IPB120N06S4-03 N-channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin TO-263

IPB120N06S4-03 Infineon  N-channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin TO-263
IPB120N06S4-03
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10 x 9.25 x 4.4mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.2 mΩ
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
125 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10120 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
167 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±20 V
Height:
4.4mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
Checking for live stock

This is N-channel MOSFET 120 A 60 V OptiMOS T2 3-Pin TO-263 manufactured by Infineon. The manufacturer part number is IPB120N06S4-03. It is of power mosfet category . The given dimensions of the product include 10 x 9.25 x 4.4mm. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.25mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 3.2 mω maximum drain source resistance. The package is a sort of to-263. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 125 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 10120 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 80 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 167 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.4mm. In addition, it has a typical 40 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

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IPB/IPI/IPP120N06S4-03 N-channel MOSFET(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPB120N06S4-03 N-channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin TO-263. You can also check on our website or by contacting our customer support team for further order details on Infineon IPB120N06S4-03 N-channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin TO-263.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14089386 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14089386.
Yes. We ship IPB120N06S4-03 Internationally to many countries around the world.