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Vishay SIR862DP-T1-GE3 N-channel MOSFET, 32 A, 25 V, 8-Pin PowerPAK SO

SIR862DP-T1-GE3 Vishay  N-channel MOSFET, 32 A, 25 V, 8-Pin PowerPAK SO
SIR862DP-T1-GE3
SIR862DP-T1-GE3
ET14080556
ET14080556
Unclassified
Vishay

Product Information

Category:
Power MOSFET
Dimensions:
5.99 x 5 x 1.12mm
Maximum Continuous Drain Current:
32 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
3.5 mΩ
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3800 pF @ 10 V
Length:
5.99mm
Pin Count:
8
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
69 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Typical Turn-On Delay Time:
28 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 32 A 25 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SIR862DP-T1-GE3. It is of power mosfet category . The given dimensions of the product include 5.99 x 5 x 1.12mm. While 32 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. It provides up to 3.5 mω maximum drain source resistance. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3800 pf @ 10 v . Its accurate length is 5.99mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 39 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 69 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. In addition, it has a typical 28 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

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SiR862DP, N-Channel 25V (D-S) MOSFET(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search SIR862DP-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14080556. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIR862DP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay SIR862DP-T1-GE3 N-channel MOSFET, 32 A, 25 V, 8-Pin PowerPAK SO. You can also check on our website or by contacting our customer support team for further order details on Vishay SIR862DP-T1-GE3 N-channel MOSFET, 32 A, 25 V, 8-Pin PowerPAK SO.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14080556 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14080556.
Yes. We ship SIR862DP-T1-GE3 Internationally to many countries around the world.