Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Texas Instruments TPS1120D Dual P-channel MOSFET, 1.17 A, 15 V, 8-Pin SOIC

TPS1120D Texas Instruments  Dual P-channel MOSFET, 1.17 A, 15 V, 8-Pin SOIC
TPS1120D
TPS1120D
Texas Instruments

Product Information

Category:
Small Signal
Dimensions:
4.9 x 3.91 x 1.58mm
Maximum Continuous Drain Current:
1.17 A
Transistor Material:
Si
Width:
3.91mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
15 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+125 °C
Typical Gate Charge @ Vgs:
5.45 nC @ 10 V
Channel Type:
P
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
840 mW
Maximum Gate Source Voltage:
-15 V, +2 V
Height:
1.58mm
Typical Turn-On Delay Time:
4.5 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
400 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
5.45nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
TPS1120D Models
Current - Continuous Drain (Id) @ 25°C:
1.17A
edacadModelUrl:
/en/models/372164
Configuration:
2 P-Channel (Dual)
Package:
Tube
Drain to Source Voltage (Vdss):
15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
840mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPS1120
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual P-channel MOSFET 1.17 A 15 V 8-Pin SOIC manufactured by Texas Instruments. The manufacturer part number is TPS1120D. It is of small signal category . The given dimensions of the product include 4.9 x 3.91 x 1.58mm. While 1.17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.91mm wide. The product offers isolated transistor configuration. It has a maximum of 15 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +125 °c. With a typical gate charge at Vgs includes 5.45 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.9mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 13 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 840 mw maximum power dissipation. It features a maximum gate source voltage of -15 v, +2 v. In addition, the height is 1.58mm. In addition, it has a typical 4.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -40 °c. It provides up to 400 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 180mohm @ 1.5a, 10v. The maximum gate charge and given voltages include 5.45nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.17a. The product is available in 2 p-channel (dual) configuration. It is shipped in tube package . The product has a 15v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 6 weeks standard lead time. 8-soic is the supplier device package value. The maximum power of the product is 840mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to tps1120, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search TPS1120D on website for other similar products.
We accept all major payment methods for all products including ET14067690. Please check your shopping cart at the time of order.
You can order Texas Instruments brand products with TPS1120D directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in FET, MOSFET Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Texas Instruments TPS1120D Dual P-channel MOSFET, 1.17 A, 15 V, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Texas Instruments TPS1120D Dual P-channel MOSFET, 1.17 A, 15 V, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14067690 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Texas Instruments" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14067690.
Yes. We ship TPS1120D Internationally to many countries around the world.