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Infineon AUIRFR1018E N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin DPAK

AUIRFR1018E Infineon  N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin DPAK
AUIRFR1018E
Infineon

Product Information

Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.4 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 79 A 60 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is AUIRFR1018E. While 79 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 110 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8.4 mω maximum drain source resistance.

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AUIRFR1018E, Automotive N-Channel HEXFET® Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search AUIRFR1018E on website for other similar products.
We accept all major payment methods for all products including ET14065032. Please check your shopping cart at the time of order.
You can order Infineon brand products with AUIRFR1018E directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon AUIRFR1018E N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon AUIRFR1018E N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14065032 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14065032.
Yes. We ship AUIRFR1018E Internationally to many countries around the world.