Diodes Inc DMN2020UFCL-7 N-channel MOSFET, 9 A, 20 V, 6-Pin X1-DFN
Product Information
Dimensions:
1.65 x 1.65 x 0.48mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
1.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.9V
Package Type:
X1-DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21.5 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1788 pF @ 10 V
Length:
1.65mm
Pin Count:
6
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±10 V
Height:
0.48mm
Typical Turn-On Delay Time:
3.8 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
26 mΩ
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Yes. We ship DMN2020UFCL-7 Internationally to many countries around the world.
This is Diodes Inc N-channel MOSFET 9 A 20 V 6-Pin X1-DFN manufactured by DiodesZetex. The manufacturer part number is DMN2020UFCL-7. The given dimensions of the product include 1.65 x 1.65 x 0.48mm. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.65mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.9v of maximum gate threshold voltage. The package is a sort of x1-dfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1788 pf @ 10 v . Its accurate length is 1.65mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 33 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of ±10 v. In addition, the height is 0.48mm. In addition, it has a typical 3.8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 26 mω maximum drain source resistance.
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