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Manufacturer : Fairchild Semiconductor
Manufacturer Part No : 2N7000TA
Enrgtech Part No : ET14054472
Product Range : PolySwitch RXEF Series

Fairchild 2N7000 N-channel MOSFET, 200 mA, 60 V, 3-Pin TO-92

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Product Information

Category : Small Signal
Dimensions : 5.2 x 4.19 x 5.33mm
Maximum Continuous Drain Current : 200 mA
Transistor Material : Si
Width : 4.19mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 60 V
Package Type : TO-92
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 0.3V
Maximum Operating Temperature : 150 °C
rohs : RoHS Certificate of Compliance
Channel Type : N
Typical Input Capacitance @ Vds : 30 pF@ 25 V
Length : 5.2mm
Pin Count : 3
Typical Turn-Off Delay Time : 10 ns
Mounting Type : Through Hole
Channel Mode : Enhancement
Maximum Power Dissipation : 0.4 W
Maximum Gate Source Voltage : ±30 V
Height : 5.33mm
Typical Turn-On Delay Time : 10 ns
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 5 Ω

Technical Documents


Availability:
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