Toshiba TK10A80E,S4X(S N-channel MOSFET, 10 A, 800 V TK, 3-Pin TO-220SIS
Product Information
Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Series:
TK
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
15mm
Width:
4.5mm
Length:
10mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK10A80E,S4X(S Internationally to many countries around the world.
This is N-channel MOSFET 10 A 800 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK10A80E,S4X(S. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 50 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 1 ω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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