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Infineon IRGSL4B60KD1PBF IGBT, 11 A 600 V, 3-Pin I2PAK (TO-262)

IRGSL4B60KD1PBF Infineon  IGBT, 11 A 600 V, 3-Pin I2PAK (TO-262)
Infineon

Product Information

Dimensions:
10.8 x 4.8 x 11.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
63 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
11 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
I2PAK (TO-262)
Minimum Operating Temperature:
-55 °C
Switching Speed:
8 → 30kHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 11 A 600 V 3-Pin I2PAK (TO-262) manufactured by Infineon. The manufacturer part number is IRGSL4B60KD1PBF. The given dimensions of the product include 10.8 x 4.8 x 11.3mm. The product is available in through hole configuration. Provides up to 63 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 11 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of i2pak (to-262). Whereas, the minimum operating temperature of the product is -55 °c. It has about 8 → 30khz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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