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Manufacturer : Infineon
Manufacturer Part No : IRGSL10B60KDPBF
Enrgtech Part No : ET14041500
Product Range : PolySwitch RXEF Series

IRGSL10B60KDPBF Infineon IGBT, 35 A 600 V, 3-Pin TO-262

Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Product Information

Dimensions : 10.67 x 4.83 x 11.3mm
Mounting Type : Through Hole
Maximum Power Dissipation : 156 W
Maximum Continuous Collector Current : 35 A
Maximum Collector Emitter Voltage : 600 V
Height : 11.3mm
Width : 4.83mm
Length : 10.67mm
Maximum Gate Emitter Voltage : ±20V
Package Type : TO-262
Minimum Operating Temperature : -55 °C
Switching Speed : 8 → 30kHz
Channel Type : N
Maximum Operating Temperature : +150 °C
Pin Count : 3
rohs : RoHS Certificate of Compliance
Transistor Configuration : Single

Technical Documents


Availability:
192
in stock
Check now

Rate:
  • 4-36
    +
    £ 1.982
  • 40
    +
    £ 1.659

Qty:

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