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Manufacturer : Infineon
Manufacturer Part No : IRF9335PBF
Enrgtech Part No : ET14041433
Product Range : PolySwitch RXEF Series

Infineon IRF9335PBF P-channel MOSFET, 5.4 A, 30 V HEXFET, 8-Pin SOIC

P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Product Information

Category : Power MOSFET
Dimensions : 4.98 x 3.99 x 1.57mm
Maximum Continuous Drain Current : 5.4 A
Transistor Material : Si
Width : 3.99mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 30 V
Maximum Gate Threshold Voltage : 2.4V
Package Type : SOIC
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 1.3V
Maximum Operating Temperature : +150 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 4.7 nC @ 4.5 V, 9.1 nC @ 10 V
Channel Type : P
Typical Input Capacitance @ Vds : 386 pF @ 25 V
Length : 4.98mm
Pin Count : 8
Typical Turn-Off Delay Time : 16 ns
Mounting Type : Surface Mount
Channel Mode : Enhancement
Maximum Power Dissipation : 2.5 W
Series : HEXFET
Maximum Gate Source Voltage : ±20 V
Height : 1.57mm
Typical Turn-On Delay Time : 9.7 ns
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 59 mΩ

Technical Documents


Availability:
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