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Infineon IPD135N03LGATMA1 N-channel MOSFET, 30 A, 30 V OptiMOS 3, 3-Pin TO-252

IPD135N03LGATMA1 Infineon  N-channel MOSFET, 30 A, 30 V OptiMOS 3, 3-Pin TO-252
IPD135N03LGATMA1
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
4.8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
770 pF @ 15 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
31 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
2.41mm
Typical Turn-On Delay Time:
3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.5 mΩ
Checking for live stock

This is N-channel MOSFET 30 A 30 V OptiMOS 3 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD135N03LGATMA1. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 4.8 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 770 pf @ 15 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 12 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 31 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.41mm. In addition, it has a typical 3 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 13.5 mω maximum drain source resistance.

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OptiMOS™3 Power-Transistor(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IPD135N03LGATMA1 N-channel MOSFET, 30 A, 30 V OptiMOS 3, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD135N03LGATMA1 N-channel MOSFET, 30 A, 30 V OptiMOS 3, 3-Pin TO-252.
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Yes. We ship IPD135N03LGATMA1 Internationally to many countries around the world.