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Manufacturer : Infineon
Manufacturer Part No : BSZ040N04LS G
Enrgtech Part No : ET14041288
Product Range : PolySwitch RXEF Series

Infineon BSZ040N04LS G N-channel MOSFET, 40 A, 40 V OptiMOS 3, 8-Pin TSDSON

Infineon OptiMOS™3 Power MOSFETs, up to 40V OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Product Information

Dimensions : 3.4 x 3.4 x 1.1mm
Maximum Continuous Drain Current : 40 A
Transistor Material : Si
Width : 3.4mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 40 V
Maximum Gate Threshold Voltage : 2V
Package Type : TSDSON
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 1.2V
Maximum Operating Temperature : +150 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 48 nC @ 10 V
Channel Type : N
Typical Input Capacitance @ Vds : 3800 pF @ 20 V
Length : 3.4mm
Pin Count : 8
Typical Turn-Off Delay Time : 33 ns
Mounting Type : Surface Mount
Channel Mode : Enhancement
Maximum Power Dissipation : 69 W
Series : OptiMOS 3
Maximum Gate Source Voltage : ±20 V
Height : 1.1mm
Typical Turn-On Delay Time : 8.5 ns
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 5.6 mΩ

Technical Documents


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