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Manufacturer : Vishay
Manufacturer Part No : SQM120N04-1m7L-GE3
Enrgtech Part No : ET14031752
Product Range : PolySwitch RXEF Series

Vishay SQM120N04-1m7L-GE3 N-channel MOSFET, 120 A, 40 V SQ Rugged, 3-Pin TO-263

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability. Advantages of SQ Rugged Series MOSFETs • AEC-Q101 qualified • Junction temperature up to +175°C • Low on-resistance n- and p-channel TrenchFET® technologies • Innovative space-saving package options Approvals AEC-Q101 MOSFET Transistors, Vishay Semiconductor

Product Information

Dimensions : 10.414 x 9.652 x 4.826mm
Maximum Continuous Drain Current : 120 A
Transistor Material : Si
Width : 9.652mm
Transistor Configuration : Single
Maximum Drain Source Voltage : 40 V
Package Type : TO-263
Number of Elements per Chip : 1
Minimum Gate Threshold Voltage : 1.5V
Maximum Operating Temperature : +175 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 190 nC @ 10 V
Channel Type : N
Typical Input Capacitance @ Vds : 11685 pF@ 20 V
Length : 10.41mm
Pin Count : 3
Typical Turn-Off Delay Time : 74 ns
Mounting Type : Surface Mount
Channel Mode : Enhancement
Maximum Power Dissipation : 375 W
Series : SQ Rugged
Maximum Gate Source Voltage : ±20 V
Height : 4.826mm
Typical Turn-On Delay Time : 15 ns
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 3.4 mΩ

Technical Documents


Availability:
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