Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
3.2 nC @ 5 V, 5.9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
806 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.4mm
Length:
3.05mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.1 A
Transistor Material:
Si
Maximum Drain Source Resistance:
400 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
This is Diodes Inc P-channel MOSFET 1.1 A 60 V 3-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is ZXMP6A13FTA. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 3.2 nc @ 5 v, 5.9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 806 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.05mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 400 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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