Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 5 V, 20.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1063 pF@ 30 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
26.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
3.8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
This is Diodes Inc Dual N-channel MOSFET 5 A 60 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is ZXMN6A25DN8TA. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 5 v, 20.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1063 pf@ 30 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 26.2 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.5mm. In addition, it has a typical 3.8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 50 mω maximum drain source resistance.
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