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Diodes Inc ZXMN6A25DN8TA Dual N-channel MOSFET, 5 A, 60 V, 8-Pin SOIC

ZXMN6A25DN8TA Diodes Inc  Dual N-channel MOSFET, 5 A, 60 V, 8-Pin SOIC
ZXMN6A25DN8TA
DiodesZetex

Product Information

Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 5 V, 20.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1063 pF@ 30 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
26.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
3.8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
50 mΩ
RoHs Compliant
Checking for live stock

This is Diodes Inc Dual N-channel MOSFET 5 A 60 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is ZXMN6A25DN8TA. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 5 v, 20.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1063 pf@ 30 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 26.2 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.5mm. In addition, it has a typical 3.8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 50 mω maximum drain source resistance.

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Datasheet(Technical Reference)
pdf icon
SO8,Dual NMOS,5A,60V,ZXMN6A25DN8TA(Technical Reference)

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FAQs

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We accept all major payment methods for all products including ET14005104. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with ZXMN6A25DN8TA directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc ZXMN6A25DN8TA Dual N-channel MOSFET, 5 A, 60 V, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc ZXMN6A25DN8TA Dual N-channel MOSFET, 5 A, 60 V, 8-Pin SOIC.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14005104 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14005104.
Yes. We ship ZXMN6A25DN8TA Internationally to many countries around the world.