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Fairchild NDT014 N-channel MOSFET, 2.7 A, 60 V, 3+Tab-Pin SOT-223

NDT014 Fairchild  N-channel MOSFET, 2.7 A, 60 V, 3+Tab-Pin SOT-223
NDT014
Fairchild Semiconductor

Product Information

Dimensions:
6.7 x 3.7 x 1.7mm
Maximum Continuous Drain Current:
2.7 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
155 pF@ 25 V
Length:
6.7mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
10 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
±20 V
Height:
1.7mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
200 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
155 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Fairchild N-channel MOSFET 2.7 A 60 V 3+Tab-Pin SOT-223 manufactured by Fairchild Semiconductor. The manufacturer part number is NDT014. The given dimensions of the product include 6.7 x 3.7 x 1.7mm. While 2.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 5 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 155 pf@ 25 v . Its accurate length is 6.7mm. It contains 3+tab pins. Whereas, its typical turn-off delay time is about 10 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.7mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -65 °c. It provides up to 200 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. The maximum gate charge and given voltages include 11 nc @ 10 v. It has a maximum Rds On and voltage of 200mohm @ 1.6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 3w (ta). The product's input capacitance at maximum includes 155 pf @ 25 v. sot-223-4 is the supplier device package value. The continuous current drain at 25°C is 2.7a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

pdf icon
NDT014, N-Channel Enhancement Mode Field Effect Transistor Data Sheet(Technical Reference)

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