Dimensions:
10.67 x 4.83 x 11.3mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
78 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2305 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
211 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
405 W
Maximum Gate Source Voltage:
±30 V
Height:
11.3mm
Typical Turn-On Delay Time:
43 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
511 mΩ
This is Fairchild N-channel MOSFET 20 A 600 V 3-Pin TO-263AB manufactured by Fairchild Semiconductor. The manufacturer part number is FCB20N60F_F085. The given dimensions of the product include 10.67 x 4.83 x 11.3mm. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 78 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2305 pf @ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 211 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 405 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 11.3mm. In addition, it has a typical 43 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 511 mω maximum drain source resistance.
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