Toshiba TK40A10N1,S4X(S N-channel MOSFET, 40 A, 100 V TK, 3-Pin TO-220SIS
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Series:
TK
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
15mm
Width:
4.5mm
Length:
10mm
Maximum Drain Source Resistance:
8.2 mΩ
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK40A10N1,S4X(S Internationally to many countries around the world.
This is N-channel MOSFET 40 A 100 V TK 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK40A10N1,S4X(S. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. The product tk, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15mm. Furthermore, the product is 4.5mm wide. Its accurate length is 10mm. It provides up to 8.2 mω maximum drain source resistance. The package is a sort of to-220sis. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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