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Infineon IRLS4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK

IRLS4030PBF Infineon  N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
87 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
11360 pF@ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
110 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
370 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
4.83mm
Typical Turn-On Delay Time:
74 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 180 A 100 V HEXFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRLS4030PBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 87 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 11360 pf@ 50 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 110 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 370 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 4.83mm. In addition, it has a typical 74 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4 mω maximum drain source resistance.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
MOSFET N-ch HEXFET 100V 180A D2PAK(Technical Reference)

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FAQs

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You can order Infineon brand products with IRLS4030PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRLS4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLS4030PBF N-channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987858 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987858.
Yes. We ship IRLS4030PBF Internationally to many countries around the world.