Infineon IRLR120NTRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 3-Pin DPAK
Product Information
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
20 nC @ 5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
48 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
265 mΩ
Checking for live stock
FAQs
Yes. You can also search IRLR120NTRPBF on website for other similar products.
We accept all major payment methods for all products including ET13987848. Please check your shopping cart at the time of order.
You can order Infineon brand products with IRLR120NTRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRLR120NTRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRLR120NTRPBF N-channel MOSFET, 10 A, 100 V HEXFET, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987848 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987848.
Yes. We ship IRLR120NTRPBF Internationally to many countries around the world.
This is N-channel MOSFET 10 A 100 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRLR120NTRPBF. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 20 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 48 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 265 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.