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Infineon IRFR3704ZPBF N-channel MOSFET, 60 A, 20 V HEXFET, 3-Pin DPAK

IRFR3704ZPBF Infineon  N-channel MOSFET, 60 A, 20 V HEXFET, 3-Pin DPAK
IRFR3704ZPBF
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.55V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.65V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.3 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1190 pF@ 10 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
4.9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
41 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 60 A 20 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR3704ZPBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.39mm. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 2.55v of maximum gate threshold voltage. The package is a sort of dpak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.65v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 9.3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1190 pf@ 10 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 4.9 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.39mm. In addition, it has a typical 41 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 mω maximum drain source resistance.

pdf icon
IRFR3704ZPbF HEXFET Power MOSFET Data Sheet(Technical Reference)

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FAQs

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You can order Infineon brand products with IRFR3704ZPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of Infineon IRFR3704ZPBF N-channel MOSFET, 60 A, 20 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFR3704ZPBF N-channel MOSFET, 60 A, 20 V HEXFET, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987772 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987772.
Yes. We ship IRFR3704ZPBF Internationally to many countries around the world.