Infineon IRF9328PBF P-channel MOSFET, 12 A, 30 V HEXFET, 8-Pin SOIC
Product Information
Category:
Power MOSFET
Dimensions:
4.98 x 3.99 x 1.57mm
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
3.99mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V, 35 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1680 pF @ 25 V
Length:
4.98mm
Pin Count:
8
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.57mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12 mΩ
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Yes. We ship IRF9328PBF Internationally to many countries around the world.
This is P-channel MOSFET 12 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF9328PBF. It is of power mosfet category . The given dimensions of the product include 4.98 x 3.99 x 1.57mm. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.99mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 18 nc @ 4.5 v, 35 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1680 pf @ 25 v . Its accurate length is 4.98mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 80 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.57mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12 mω maximum drain source resistance.
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